| PART |
Description |
Maker |
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| SGP13N60UFD SGP13N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
Fairchild Semiconductor
|
| SGR6N60UF SGR6N60UFTF SGR6N60UFTM |
Discrete, High Performance IGBT
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| 1MB10D-120 |
Fuji Discrete Package IGBT 16 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
|
| 1MB20D-060 |
Fuji Discrete Package IGBT 38 A, 600 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| OM6517SA OM6517SW |
1200V DISCRETE Hi-Rel IGBT in a D3 package
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
|
International Rectifier
List of Unclassifed Manufacturers
|
| IRG4BC10K IRG4BC10KPBF |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| TSG60N100CE |
Discrete Devices-IGBT-IGBT
|
Taiwan Semiconductor
|
| FF900R12IE4T |
Discrete IGBT
|
Infineon Technologies AG
|
| FP100R07N3E4B11 |
Discrete IGBT
|
Infineon Technologies AG
|
